Subject Details
Dept     : ECE
Sem      : 5
Regul    : 2019
Faculty : m.pradeepa
phone  : NIL
E-mail  : pradeepa.m.ece@snsct.org
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Lecture Notes

UNIT 1:
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CMOS fabrication – p-well process
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n-well process
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, twin-tub process
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MOS transistor theory-IV characteristics
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CV characteristics
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Non-ideal IV effects
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, CMOS inverter –DC characteristics
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Stick diagram
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, Layout diagrams
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, CMOS inverter –DC characteristics
UNIT 2:
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Examples of Combinational Logic Design
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Pass transistor Logic & Transmission gates
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Pseudo NMOS logic
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Static CMOS design
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Domino Logic
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Power dissipation
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Low power design principles
UNIT 3:
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Static and Dynamic Latches and Registers
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Timing issues
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Pipelines
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Clock strategies
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Low power memory circuits
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Synchronous design.
UNIT 4:
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VLSI test
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CHIP LEVEL TEST TECHNIQUES & SYSTEM LEVEL TEST TECHNIQUES.
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BIST & BOUNDARY SCAN
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Design Strategies
UNIT 5:
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Basic Concepts and Identifiers
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gate primitives gate delays
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operators timing controls
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operators timing controls
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procedural assignments conditional statements
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Design hierarchies Behavioral and RTL modeling
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Test benches, Examples: decoder, equality detector, comparator, priority encoder, full adder, Ripple carry adder and D flip flop